5/2/2023 0 Comments Ion bonding silicon4 – 7 ) The first issue is metallic-impurity contamination during device fabrication. ![]() Figure 1 illustrates three serious technological issues with the CMOS image sensor fabrication process. However, contamination by impurities and remaining defects in the active region of electrical devices result in CMOS image sensor operation error. 1 – 3 ) Such devices require CMOS image sensors with high electrical performance. Therefore, we believe that this bonding wafer is effective in decreasing the dark current and white-spot defect density for advanced CMOS image sensors.ĬMOS image sensors have been widely used in mobile communication devices such as smartphones, tablets, and security sensors for monitoring and preventing collisions between automobiles. Furthermore, this wafer inhibits oxygen out-diffusion to the epitaxial layer from the CZ-grown silicon substrate after device fabrication. This bonding wafer has strong gettering capability in both the wafer-bonding region and the carbon-cluster ion-implanted projection range. However, this combination process can be used to form an epitaxial layer on the amorphous layer of this implanted CZ-grown silicon substrate surface. Thus, an epitaxial layer cannot be grown on this implanted CZ-grown silicon substrate. This implantation condition transforms the top-surface region of the CZ-grown silicon substrate into a thin amorphous layer. We demonstrated that this combination process can be used to form an epitaxial layer on a carbon-cluster ion-implanted Czochralski (CZ)-grown silicon substrate with a high dose of 1 × 10 16 atoms/cm 2. These carbon-cluster ions are made of carbon and hydrogen, which can passivate process-induced defects.
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